Collector-emitter voltage: 1200V
Gate-emitter voltage: ±20V
Minimum gate-emitter threshold voltage: 4.5V
Maximum gate-emitter threshold voltage: 8.5V
Typical gate-emitter threshold voltage: 6.5V
Collector to emitter saturation voltage: 1.9V to 2.3V (vary with temperature, current, and voltage conditions)
Collector current
At 25℃: 30V
At 50℃: 15V
Maximum pulsed collector current: 45A
Diode continuous forward current: 15A
Diode maximum forward current: 45A
Collector cut-off current: 3mA
Gate-emitter leakage current: ±250nA
Rise time: 20ns
Fall time: 100ns
Storage and operating temperature: -55℃ to 150V

Weight 0.1 kg
Dimensions 20 × 15 × 5 cm
Number of items

1, 5