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The IRF540NP from International Rectifier is 100V single N channel HEXFET power MOSFET in TO-220AB package. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET are well know to provide extremely efficiency and reliability which can be used in wide variety of applications. Drain to source voltage Vds is 100V; Gate to source voltage is 20V. On resistance Rds(on) of 44mohm at Vgs of 10V; Power dissipation Pd of 130W at 25°C. Continuous drain current Id of 33A at Vgs 10V and 25°C; Operating junction temperature range from -55°C to 175°C.

Weight 0.1 kg
Dimensions 20 × 15 × 5 cm
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